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J
M
SOT-523 Plastic-Encapsulate MOSFETS
HM3018SR N-channel MOSFET
V(BR)DSS
30 V
RDS(on)MAX
8Ω@4V
13Ω@2.5V
ID
100mA
SOT-523
1. GATE 2. SOURCE 3. DRAIN
FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for
Portable equipment z Easily designed drive circuits z Easy to parallel
MARKING
APPLICATION z Interfacing , Switching
Equivalent Circuit
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Continuous Drain Current
RθJA
Thermal Resistance, Junction-to-Ambient
PD
Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
Value 30 ±20 0.1 833 0.
HM3018SR Datasheet
