HM30N10 Description
The HM30N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM30N10 Key Features
- VDS = 100V,ID =30A RDS(ON) < 31mΩ @ VGS=10V
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
- Tape width