HM40N120FT Key Features
- Low switching power loss 低开关损耗
- Low switching surge and noise 低开关浪涌和噪音
- Advanced Field Stop trench technology 先进的场截止沟槽技术
- Max junction temperature 175 oC 最大结温 175 oC
HM40N120FT is 1200V 40A IGBT manufactured by H&M Semiconductor.
| Part Number | Description |
|---|---|
| HM40N15KA | N-Channel Enhancement Mode Power MOSFET |
| HM40N04D | N-Channel Enhancement Mode Power MOSFET |
| HM40N04K | N-Channel Enhancement Mode Power MOSFET |
| HM40N06D | N-Channel Enhancement Mode Power MOSFET |
| HM40N20D | N-Channel Enhancement Mode Power MOSFET |
+01)7 Part No.:HM40N120FT Package:TO-247-3L.