HM40N120FT - 1200V 40A IGBT

H&M Semiconductor

Key Features

Low switching power loss.
Low switching surge and noise.
Advanced Field Stop trench technology.
Max junction temperature 175 oC 175 oC.

HM40N120FT 1200v 40a igbt by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM40N120FT
Manufacturer	H&M Semiconductor
File Size	377.38 KB
Description	1200V 40A IGBT
Datasheet	HM40N120FT Datasheet

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+01)7 Part No.：HM40N120FT Package：TO-247-3L Features:  Low switching power loss  Low switching surge and noise  Advanced Field Stop trench technology  Max junction temperature 175 oC 175 oC Applications:  UPS  Welding machine  Solar converters  EV-Charging Key Performance and Package Parameters Type HM40N120FT Vce 1200V Ic VCEsat,Tvj=25℃ 40A 1.