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HM40P03Q - P-Channel Enhancement Mode Power MOSFET

Description

The HM40P03Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

  • VDS = -30V,ID = -40A RDS(ON) < 8.9mΩ @ VGS=-10V RDS(ON).

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Full PDF Text Transcription (Reference)

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P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM40P03Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -40A RDS(ON) < 8.9mΩ @ VGS=-10V RDS(ON) <12.9mΩ @ VGS=-4.
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