Datasheet Details
| Part number | HM40SDN02Q |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 627.53 KB |
| Description | Dual Asymmetric N-Channel Enhancement Mode MOSFET |
| Download | HM40SDN02Q Download (PDF) |
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Overview: HM40SDN02Q HM40SDN02Q Dual Asymmetric N-Channel Enhancement Mode MOSFET.
| Part number | HM40SDN02Q |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 627.53 KB |
| Description | Dual Asymmetric N-Channel Enhancement Mode MOSFET |
| Download | HM40SDN02Q Download (PDF) |
|
|
|
This device uses advanced trench technology to provide excellent RDSON and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Applications Power Management in notebook computer Portable Equipment Battery Powered Systems Ordering Information Device Package Shipping HM40SDN02Q DFN3X3 5000/Reel Bottom View HM40SDN02Q YYWW Marking HM40SDN02Q Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain-to-Source Voltage 20 V VGSS Gate-to-Source Voltage ±20 V TC=25℃ 40 A ID Continuous Drain Current TC=100℃ 28 A IDM Pulsed Drain Current b 120 A Continuous Drain Current TA=25℃ 14 A IDSM a TA=70℃ 9 A TC=25℃ 25 W PD Power Dissipation c TC=100℃ 10 W TA=25℃ 2.5 W PDSM Power Dissipation a TA=70℃ 0.9 W IAS Avalanche Current 40 A EAS TJ TSTG Avalanche Energy, L=0.05mH Operation junction temperature Storage temperature range 16 mJ -55 to 150 ℃ -55 to 150 ℃ Thermal Resistance Ratings(TA=25℃ unless otherwise noted) Symbol RθJA RθJC Note: Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Case Thermal Resistance Typical Maximum 55 6 Unit ℃/W a.
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