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HM45P02Q - P-Channel Enhancement Mode Power MOSFET

General Description

The HM45P02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =-20V,ID =-45A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2.5V RDS(ON) < 12mΩ @ VGS=-1.8V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Schematic diagram Pin Assignment.

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HM45P02Q P-Channel Enhancement Mode Power MOSFET Description The HM45P02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-20V,ID =-45A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2.5V RDS(ON) < 12mΩ @ VGS=-1.8V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Pin Assignment Application ● Load switch ● Battery protection Package Marking and Ordering Information DFN 3.3x3.3 EP top view Device Marking HM45P02Q Device HM45P02Q Device Package DFN 3.3x3.