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HM45P03 - P-Channel Enhancement Mode Power MOSFET

General Description

The HM45P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Key Features

  • VDS = -30V,ID = -45A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM45P03 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM45P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -45A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON) <15mΩ @ VGS=-4.