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HM4611A - N & P-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) and low gate charge .

It can be used in a wide variety of applications.

Key Features

  • N-Channel VDS = 60V,ID =9.0A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ) RDS(ON) < 24mΩ @ VGS=4.5V  7S18PŸ .
  • P-Channel VDS = -60V,ID = -6.5A RDS(ON) < 45mΩ @ VGS=-10V N-channel P-channel Schematic diagram HM4611A.
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Other Datasheets by H&M Semiconductor

Part Number Description
HM4611 N and P-Channel Enhancement Mode Power MOSFET
HM4611B N & P-Channel Enhancement Mode Power MOSFET
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HM4611A N and P-Channel Enhancement Mode Power MOSFET Description The HM4611A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . It can be used in a wide variety of applications. General Features ● N-Channel VDS = 60V,ID =9.0A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ) RDS(ON) < 24mΩ @ VGS=4.5V  7S18PŸ ● P-Channel VDS = -60V,ID = -6.