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HM4611Q - N And P-Channel Enhancement Mode MOSFET

General Description

The HM4611Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • N-channel： VDS =60V,ID =10A RDS(ON)=34mΩ (typical) @ VGS=10V RDS(ON)=46mΩ (typical) @ VGS=4.5V P-Channel： VDS =-60V,ID =-10A RDS(ON)=85mΩ (typical) @ VGS=-10V RDS(ON)=135mΩ (typical) @ VGS=-4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested 100% UIS TESTED!.

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Other Datasheets by H&M Semiconductor

Part Number Description
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HM4611Q N And P-Channel Enhancement Mode MOSFET Description Schematic diagram The HM4611Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features  N-channel： VDS =60V,ID =10A RDS(ON)=34mΩ (typical) @ VGS=10V RDS(ON)=46mΩ (typical) @ VGS=4.5V P-Channel： VDS =-60V,ID =-10A RDS(ON)=85mΩ (typical) @ VGS=-10V RDS(ON)=135mΩ (typical) @ VGS=-4.5V  Excellent gate charge x RDS(ON) product(FOM)  Very low on-resistance RDS(ON)  150 °C operating temperature  Pb-free lead plating  100% UIS tested 100% UIS TESTED! Application 100% ∆Vds TESTED! Marking and pin assignment Q1:1.Source 2.Gate 7.Drain 8.Drain Q2:3.Source 4.