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HM4611B - N & P-Channel Enhancement Mode Power MOSFET

General Description

The HM4611B uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V.
  • P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram HM4611B Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity HM4611B HM4611B SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless othe.

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HM4611B N and P-Channel Enhancement Mode Power MOSFET Description The HM4611B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 60V,ID =6.