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HM4611B - N & P-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM4611B N & P-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM4611B

Datasheet Details

Part number	HM4611B
Manufacturer	H&M Semiconductor
File Size	579.05 KB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	HM4611B Datasheet
Additional preview pages of the HM4611B datasheet.

HM4611B Product details

Description

The HM4611B uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V.
P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Schematic diagram HM4611B Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity HM4611B HM4611B SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless othe.

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Published: Nov 27, 2018 |