HM4618 - N & P-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Part number	HM4618
Manufacturer	H&M Semiconductor
File Size	728.56 KB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	HM4618 Datasheet
Additional preview pages of the HM4618 datasheet.

The HM4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

N-Channel VDS = 40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.5V.
P-Channel VDS = -40V,ID = -7.5A RDS(ON) < 42mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package N-channel P-channel Schematic diagram HM4618 Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width HM4618 HM4618.

Other Datasheets by H&M Semiconductor

HM4618A - N & P-Channel Enhancement Mode Power MOSFET
HM4618B - N & P-Channel Enhancement Mode Power MOSFET
HM4618SP - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
HM4611 - N and P-Channel Enhancement Mode Power MOSFET
HM4611A - N & P-Channel Enhancement Mode Power MOSFET
HM4611B - N & P-Channel Enhancement Mode Power MOSFET
HM4611Q - N And P-Channel Enhancement Mode MOSFET
HM4612 - N & P-Channel Enhancement Mode Power MOSFET

Published: Nov 27, 2018 |