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HM4618A - N & P-Channel Enhancement Mode Power MOSFET

General Description

The HM4618A uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • N-Channel VDS =-40V,ID =-13A RDS(ON).

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HM4618A N and P-Channel Enhancement Mode Power MOSFET Description The HM4618A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =-40V,ID =-13A RDS(ON) <15mΩ @ VGS=-10V RDS(ON) <18mΩ @ VGS=-4.