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HM55P06K - P-Channel Enhancement Mode Power MOSFET

General Description

The HM55P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Key Features

  • VDS =-60V,ID =-55A RDS(ON).

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HM55P06K P-Channel Enhancement Mode Power MOSFET Description The HM55P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.