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HM60N08 - N-Channel Enhancement Mode Power MOSFET

General Description

The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =80V,ID =60A RDS(ON) < 10.5mΩ @ VGS=10V (Typ:8.9mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Full PDF Text Transcription for HM60N08 (Reference)

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N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be us...

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design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =80V,ID =60A RDS(ON) < 10.5mΩ @ VGS=10V (Typ:8.

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