Datasheet4U Logo Datasheet4U.com

HM610K - N&P-Channel complementary Power MOSFET

General Description

The HM610K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • N channel.
  • VDS =100V,ID = 15 A RDS(ON).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM6116 2048-word X 8bit High Speed CMOS Static RAM Hitachi Semiconductor
HM6116 2K x 8 GENERAL PURPOSE CMOS SRAM MHS
HM6147H 4096 x 1-Bit High Speed CMOS SRAM Hitachi
HM6148HLP 1024 x 4-Bit High Speed CMOS SRAM Hitachi
HM6167 16384 x 1-Bit High Speed CMOS SRAM Hitachi

Other Datasheets by H&M Semiconductor

Part Number Description
HM6100 Ultra Low Power Battery Monitor
HM603K N&P-Channel complementary Power MOSFET
HM605K N&P-Channel V Complementary MOSFET
HM607K N&P-Channel V Complementary MOSFET
HM609K N&P-Channel V Complementary MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N&P-Channel complementary Power MOSFET Description The HM610K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =100V,ID = 15 A RDS(ON) <100mΩ @ VGS=10V RDS(ON) <110mΩ @ VGS=4.5V p channel ● VDS =-0V,ID =-13A RDS(ON) <210mΩ @ VGS=-10V RDS(ON) <225mΩ @ VGS=-4.