The HM6N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
can be used in a wide variety of applications.
| Part number | HM6N15D |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 741.09 KB |
| Description | MOSFET |
| Datasheet |
 HM6N15D Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| HM6-6617B883 | 2K x 8 CMOS PROM | Intersil Corporation |
| HM6-6642-9 | 512 x 8 CMOS PROM | Intersil Corporation |
| HM6-6642B-9 | 512 x 8 CMOS PROM | Intersil Corporation |
| HM60 | PRECISION METAL FILM RESISTORS | RCD |
| HM6116 | 2048-word X 8bit High Speed CMOS Static RAM | Hitachi Semiconductor |
| Part Number | Description |
|---|---|
| HM6N10 | N-Channel Enhancement Mode Power MOSFET |
| HM6N10PR | N-Channel Enhancement Mode Power MOSFET |
| HM6N10R | N-Channel Enhancement Mode Power MOSFET |
| HM6N70 | N-channel Enhanced VDMOSFET |
| HM6N70F | N-channel Enhanced VDMOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
