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HM6N70F - N-channel Enhanced VDMOSFET

Download the HM6N70F datasheet PDF. This datasheet also covers the HM6N70 variant, as both devices belong to the same n-channel enhanced vdmosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM6N70-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by H&M Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HM6N70/F General Description： HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220, TO-220Fwhich accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.