Datasheet4U Logo Datasheet4U.com

HM6N70 - N-channel Enhanced VDMOSFET

General Description

enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM6-6617B883 2K x 8 CMOS PROM Intersil Corporation
HM6-6642-9 512 x 8 CMOS PROM Intersil Corporation
HM6-6642B-9 512 x 8 CMOS PROM Intersil Corporation
HM60 PRECISION METAL FILM RESISTORS RCD
HM6116 2048-word X 8bit High Speed CMOS Static RAM Hitachi Semiconductor

Other Datasheets by H&M Semiconductor

Part Number Description
HM6N70F N-channel Enhanced VDMOSFET
HM6N10 N-Channel Enhancement Mode Power MOSFET
HM6N10PR N-Channel Enhancement Mode Power MOSFET
HM6N10R N-Channel Enhancement Mode Power MOSFET
HM6N15D MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HM6N70/F General Description： HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220, TO-220Fwhich accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.