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HMS15N50 Datasheet 500v N-channel MOSFET

Manufacturer: H&M Semiconductor

Overview: General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This Power MOSFET is producFeeadtuurseisng H&M Semi’s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5ay0tee0.

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i=cat0al .5i2lΩo5n@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion HMS15N50F,HMS15N50 HMS15N50T,HMS15N50A 500V N-Channel MOSFET

Key Features

  • -15A, 500V, RDS(on) typ. = 0.28Ω@VGS = 10 V - Low gate charge ( typical 70nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability HMS15N50F HMS15N50 HMS15N50T HMS15N50A D TO-220F GDS GDS TO-220 GDS TO-247 GDS TO-3P G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter TO-220/247/3P TO-220F VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1.

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