Datasheet Details
| Part number | HMS15N65I |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 509.12 KB |
| Description | N-Channel Super Junction Power MOSFET |
| Datasheet |
 HMS15N65I Datasheet
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Description
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.
This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
- New technology for high voltage device.
- Low on-resistance and low conduction losses.
- Small package.
- Ultra Low Gate Charge cause lower driving requirements.
- 100% Avalanche Tested.
- ROHS compliant VDS RDS(ON)TYP ID 650 V 220 mΩ 15 A.