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HMS15N50T - 500V N-Channel MOSFET

Download the HMS15N50T datasheet PDF. This datasheet also covers the HMS15N50F variant, as both devices belong to the same 500v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

theacsh--nb7Lo.oe6wlAeo,gng5ay0tee0.

Vsch,paRerDgcSe(oi(na)ttylylppy.

Features

  • -15A, 500V, RDS(on) typ. = 0.28Ω@VGS = 10 V - Low gate charge ( typical 70nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability HMS15N50F HMS15N50 HMS15N50T HMS15N50A D TO-220F GDS GDS TO-220 GDS TO-247 GDS TO-3P G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter TO-220/247/3P TO-220F VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMS15N50F-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
General Description This Power MOSFET is producFeeadtuurseisng H&M Semi’s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5ay0tee0. Vsch,paRerDgcSe(oi(na)ttylylppy. i=cat0al .5i2lΩo5n@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion HMS15N50F,HMS15N50 HMS15N50T,HMS15N50A 500V N-Channel MOSFET Features -15A, 500V, RDS(on) typ.= 0.
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