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HMS40N10A - N-Channel Super Trench Power MOSFET

Product Overview

H&M Semiconductor

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HMS40N10A N-Channel Super Trench Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HMS40N10A

Datasheet Details

Part number	HMS40N10A
Manufacturer	H&M Semiconductor
File Size	844.00 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS40N10A Datasheet
Additional preview pages of the HMS40N10A datasheet.

Product details

Description

The HMS40N10A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Features

VDS =100V,ID =40A RDS(ON) =12mΩ(max @ VGS=10V RDS(ON) =16mΩ(max) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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Published: Jul 1, 2025 |