HMS4030 - N-Channel Super Trench Power MOSFET

Description

The HMS4030 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

VDS =100V,ID =115A RDS(ON).

H&M Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	HMS4030
Manufacturer	H&M Semiconductor
File Size	484.46 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS4030 Datasheet
Additional preview pages of the HMS4030 datasheet.

📁 Similar Datasheet

HMS4030 - N-channel 100V MOSFET (VBsemi)
HMS4294 - N-Channel 100V Power MOSFET (VBsemi)
HMS-23KMK381P3V - DC 3V 6-wire Stepper Motor (ETC)
HMS0864B - HMS0864B Series (Delta)
HMS0864B-100 - HMS0864B Series (Delta)
HMS0864B-1R0 - HMS0864B Series (Delta)
HMS0864B-2R2 - HMS0864B Series (Delta)
HMS0864B-3R3 - HMS0864B Series (Delta)
HMS0864B-4R7 - HMS0864B Series (Delta)
HMS0864B-9R2 - HMS0864B Series (Delta)

Other Datasheets by H&M Semiconductor

HMS40N10A - N-Channel Super Trench Power MOSFET
HMS40N10D - N-Channel Super Trench Power MOSFET
HMS40N10KA - N-Channel Super Trench Power MOSFET
HMS40N65T - 650V N-Channel Super Junction MOSFET
HMS4240 - N-Channel Super Trench Power MOSFET
HMS4260 - N-Channel Super Trench Power MOSFET
HMS4264 - N-Channel Super Trench Power MOSFET
HMS4294 - N-Channel Super Trench Power MOSFET

Full PDF Text Transcription

Click to expand full text

HMS4030 N-Channel Super Trench Power MOSFET Description The HMS4030 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =115A RDS(ON) <8.

Published: Jun 30, 2025 |