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HMS4294 - N-Channel Super Trench Power MOSFET

Description

The HMS4294 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =100V,ID =14A RDS(ON)=8.8mΩ (typical) @ VGS=10V RDS(ON)=9.8mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

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Datasheet preview – HMS4294

Datasheet Details

Part number HMS4294
Manufacturer H&M Semiconductor
File Size 593.96 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet HMS4294 Datasheet
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+06 N-Channel Super Trench Power MOSFET Description The HMS4294 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =14A RDS(ON)=8.8mΩ (typical) @ VGS=10V RDS(ON)=9.8mΩ (typical) @ VGS=4.
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