HMS40N10D - N-Channel Super Trench Power MOSFET

Product Overview

H&M Semiconductor

Part number	HMS40N10D
Manufacturer	H&M Semiconductor
File Size	586.38 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS40N10D Datasheet
Additional preview pages of the HMS40N10D datasheet.

The HMS40N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

VDS =100V,ID =40A RDS(ON) =7.2mΩ(typical) @ VGS=10V RDS(ON) =9.5mΩ(typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested Schematic diagram Marking and pin assignment.

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Published: Aug 12, 2025 |