HMS4296 - N-Channel Super Trench Power MOSFET

Product Overview

H&M Semiconductor

Part number	HMS4296
Manufacturer	H&M Semiconductor
File Size	455.86 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS4296 Datasheet
Additional preview pages of the HMS4296 datasheet.

The +06 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS =100V,ID =12A RDS(ON)=9.9mΩ (typical) @ VGS=10V RDS(ON)=11.5mΩ (typical) @ VGS=4.5V Schematic diagram.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested Marking and pin assignment.

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Published: Jun 22, 2025 |