HMS4296 - N-Channel Super Trench Power MOSFET

Product Overview

H&M Semiconductor

Part number	HMS4296
Manufacturer	H&M Semiconductor
File Size	455.86 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS4296 Datasheet
Additional preview pages of the HMS4296 datasheet.

The +06 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

VDS =100V,ID =12A RDS(ON)=9.9mΩ (typical) @ VGS=10V RDS(ON)=11.5mΩ (typical) @ VGS=4.5V Schematic diagram.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested Marking and pin assignment.

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Published: Jun 22, 2025 |