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HMS4444B - N-Channel Super Trench Power MOSFET

Product Overview

H&M Semiconductor

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HMS4444B N-Channel Super Trench Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HMS4444B

Datasheet Details

Part number	HMS4444B
Manufacturer	H&M Semiconductor
File Size	575.43 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS4444B Datasheet
Additional preview pages of the HMS4444B datasheet.

HMS4444B Product details

Description

The HMS4444B uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

VDS =80V,ID =10A RDS(ON)=16mΩ (typical) @ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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Published: Jul 1, 2025 |