HM11P20K
HM11P20K is P-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM11P20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =-200V,ID =-11A RDS(ON) <300mΩ @ VGS=-10V （Typ.=120m R）
Schematic diagram
- Super high dense cell design
- Advanced trench process technology
- Reliable and rugged
- High density cell design for ultra low On-Resistance
Application
- Portable equipment and battery powered systems
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-252-2L
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Operating Junction and Storage Temperature...
