HM11P20K Description
The HM11P20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM11P20K Key Features
- VDS =-200V,ID =-11A RDS(ON) <300mΩ @ VGS=-10V （Typ.=120mR）
- Super high dense cell design
- Advanced trench process technology
- Reliable and rugged
- High density cell design for ultra low On-Resistance
- Portable equipment and battery powered systems