• Part: HM2302G
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 425.50 KB
Download HM2302G Datasheet PDF
H&M Semiconductor
HM2302G
DESCRIPTION The HM2302- uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES - VDS = 20V,ID = 2.9A RDS(ON) < mΩ @ VGS=2.5V RDS(ON) < mΩ @ VGS=4.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package S Schematic diagram 3D G1 2S Marking and pin Assignment Application - Battery protection - Load switch - Power management SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package HM2302- SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note...