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HM2302G Datasheet

N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM2302G Overview

The HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

HM2302G Key Features

  • VDS = 20V,ID = 2.9A RDS(ON) < mΩ @ VGS=2.5V RDS(ON) < mΩ @ VGS=4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package
  • Battery protection -Load switch -Power management

HM2302 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
ETC HM2302 Digital temperature and humidity sensor ETC
VBsemi Logo HM2302 N-Channel MOSFET VBsemi

More Datasheets from H&M Semiconductor

See all H&M Semiconductor datasheets

Part Number Description
HM2302 N-Channel Enhancement Mode Power MOSFET
HM2302A N-channel MOSFET
HM2302B N-Channel Trench Power MOSFET
HM2302BJR N-Channel Enhancement Mode Power MOSFET
HM2302BKR N-Channel Enhancement Mode Power MOSFET
HM2302BSR N-Channel Enhancement Mode Power MOSFET
HM2302BWKR Dual N-Channel Enhancement Mode Field Effect Transistor
HM2302D N-Channel Enhancement Mode Power MOSFET
HM2302DR N-Channel 20V MOSFET
HM2302E N-Channel Enhancement Mode Power MOSFET

HM2302G Distributor