• Part: HM25P03K
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 840.03 KB
Download HM25P03K Datasheet PDF
H&M Semiconductor
HM25P03K
DESCRIPTION The HM25P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES - VDS = -30V,ID = -25A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - Battery Switch - Load switch - Power management S Schematic diagram Marking and pin assignment TO-252-2L top view Package Marking And Ordering Information Device Marking Device Device Package TO-252-2L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ,TST G Limit -30 ±20 -25 -75 50 -55 To...