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HM25P06D Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM25P06D datasheet preview

Datasheet Details

Part number	HM25P06D
Manufacturer	H&M Semiconductor
File Size	411.09 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM25P06D-HMSemiconductor.pdf

HM25P06D Overview

The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

HM25P06D Key Features

VDS =-60V,ID =-25A RDS(ON) <28mΩ @ VGS=-10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Load switch
Tape width
Quantity

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HM25P06D Distributor