• Part: HM25P03Q
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 517.40 KB
Download HM25P03Q Datasheet PDF
H&M Semiconductor
HM25P03Q
DESCRIPTION The H034 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES - V S = -30V,I = -25A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - Battery Switch - Load switch - Power management S Schematic diagram Marking and pin assignment Package Marking And Ordering Information Device Marking Device Device Package +034+034 ')1;/ Reel S ize Tape width Ø330mm12mm Quantity 2 500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note...