HM25P06
Description
The HM3 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
General Features
- VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Application
- High side switch for full bridge converter
- DC/DC converter for LCD display
100% UIS TESTED!
100% ∆Vds TESTED!
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Schematic diagram
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Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-/
Reel Size
- Tape width
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power...
