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HM25P06 Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM25P06 Overview

The HM3 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

HM25P06 Key Features

  • VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • High side switch for full bridge converter
  • DC/DC converter for LCD display
  • Tape width

HM25P06 Distributor