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HM3400G

Manufacturer: H&M Semiconductor

HM3400G datasheet by H&M Semiconductor.

HM3400G datasheet preview

HM3400G Datasheet Details

Part number HM3400G
Datasheet HM3400G-HMSemiconductor.pdf
File Size 382.72 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM3400G page 2 HM3400G page 3

HM3400G Overview

The HM3400G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

HM3400G Key Features

  • VDS = 30V,ID = 2.0A RDS(ON) = 100mΩ (Typ) @ VGS=2.5V RDS(ON) = 75mΩ (Typ) @ VGS=4.5V RDS(ON) = 65mΩ (Typ) @ VGS=10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package
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HM3400G Distributor

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