• Part: HM3400G
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 382.72 KB
Download HM3400G Datasheet PDF
H&M Semiconductor
HM3400G
DESCRIPTION The HM3400G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES - VDS = 30V,ID = 2.0A RDS(ON) = 100mΩ (Typ) @ VGS=2.5V RDS(ON) = 75mΩ (Typ) @ VGS=4.5V RDS(ON) = 65mΩ (Typ) @ VGS=10V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - PWM applications - Load switch - Power management Schematic diagram 3400 Marking and pin Assignment SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power...