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HM3400G Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM3400G Overview

The HM3400G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

HM3400G Key Features

  • VDS = 30V,ID = 2.0A RDS(ON) = 100mΩ (Typ) @ VGS=2.5V RDS(ON) = 75mΩ (Typ) @ VGS=4.5V RDS(ON) = 65mΩ (Typ) @ VGS=10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package

HM3400G Distributor