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HM4260

Manufacturer: H&M Semiconductor

HM4260 datasheet by H&M Semiconductor.

HM4260 datasheet preview

HM4260 Datasheet Details

Part number HM4260
Datasheet HM4260-HMSemiconductor.pdf
File Size 620.37 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM4260 page 2 HM4260 page 3

HM4260 Overview

The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM4260 Key Features

  • VDS =60V,ID =19A RDS(ON) < 11.5mΩ @ VGS=10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible Power Supply
  • Tape width
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