HM4260
HM4260 is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =60V,ID =19A RDS(ON) < 11.5mΩ @ VGS=10V
(Typ:9.1mΩ)
Schematic diagram
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED! 100% ΔVds TESTED!
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
SOP-8
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter...
