HM4264A Datasheet (H&M Semiconductor)

Part HM4264A
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer H&M Semiconductor
Size 617.66 KB
H&M Semiconductor

HM4264A Overview

Description

The HM4264A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Key Features

  • VDS = 60V,ID =12.5A RDS(ON) < 17mΩ @ VGS=10V (Typ:12.6mΩ) RDS(ON) < 22mΩ @ VGS=4.5V (Typ:16mΩ)
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Low gate to drain charge to reduce switching losses