HM4264B Datasheet | H&M Semiconductor

Description The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 50V,ID =1A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Low gate to drain charge to reduce switching losses Schematic diagram Application - Power switching application - Load switch Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 50 Gate-Source Voltage ±20 Drain Current-Continuous ID 1 Drain Current-Continuous(TC=10...