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HM4447 Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM4447 Overview

The HM4447 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management.

HM4447 Key Features

  • VDS = -30V,ID = -25A RDS(ON) <9mΩ @ VGS=-10V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
  • Power management
  • Load switch

More Datasheets from H&M Semiconductor

See all H&M Semiconductor datasheets

Part Number Description
HM4440 N-Channel Enhancement Mode Power MOSFET
HM4440A N-Channel Enhancement Mode Power MOSFET
HM4441 P-Channel Enhancement Mode Power MOSFET
HM4441A N-Channel Enhancement Mode Power MOSFET
HM4443 P-Channel Enhancement Mode Power MOSFET
HM4444 N-Channel Enhancement Mode Power MOSFET
HM4449 P-Channel Enhancement Mode Power MOSFET
HM4402A N-Channel Enhancement Mode Power MOSFET
HM4402B N-Channel Enhancement Mode Power MOSFET
HM4402C N-Channel Enhancement Mode Power MOSFET

HM4447 Distributor