H&M Semiconductor HM4821
The HM4821 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.| Part No. | HM4821 |
|---|---|
| Datasheet | HM4821 Download |
| Manufacturer |  H&M Semiconductor |
| Description | Dual P-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
G1 D1 G2 D2GENERAL FEATURES
● VDS =-60V,ID =-6.5A RDS(ON) <45mΩ @ VGS=-10V● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation S1 S2 Schematic diagram HM4821 Application
● Load switch Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package HM4821 HM4821 SOP8 Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃)
