HM4821 Datasheet | H&M Semiconductor

Description The HM4821 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. G1 D1 G2 D2 General Features - VDS =-60V,ID =-6.5A RDS(ON) <45mΩ @ VGS=-10V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation S1 S2 Schematic diagram Application - Load switch Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package SOP8 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃)...