HM4822B
HM4822B is Dual N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
DESCRIPTION
The HM4822B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
- VDS =30V,ID =10A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V
Schematic diagram
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
Application
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
Marking and pin Assignment
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Limit
30 ±20 10
6 50 2.5 -55 To 150
Unit
V V A A A W ℃
Thermal...
