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HM4826A

Manufacturer: H&M Semiconductor

HM4826A datasheet by H&M Semiconductor.

HM4826A datasheet preview

HM4826A Datasheet Details

Part number	HM4826A
Datasheet	HM4826A-HMSemiconductor.pdf
File Size	714.03 KB
Manufacturer	H&M Semiconductor
Description	Dual N-Channel Enhancement Mode Power MOSFET

HM4826A Overview

The HM4826A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM4826A Key Features

VDS = 60V,ID =12.5A RDS(ON) <20mΩ @ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Low gate to drain charge to reduce switching losses
Power switching application
Load switch
Tape width
Quantity

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HM4805	Dual P-Channel Enhancement Mode Power MOSFET
HM4805A	Dual P-Channel Enhancement Mode Power MOSFET
HM4805B	Dual P-Channel Enhancement Mode Power MOSFET
HM4806B	Dual N-Channel Enhancement Mode Power MOSFET
HM4806D	Dual N-Channel Enhancement Mode Power MOSFET
HM4812	Dual N-Channel Enhancement Mode Power MOSFET

HM4826A Distributor