HM4826A
HM4826A is Dual N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM4826A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 60V,ID =12.5A RDS(ON) <20mΩ @ VGS=10V
Schematic diagram
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
Application
- Power switching application
- Load switch
Marking and pin Assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
SOP-8
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Limit
60 ±20 12.5
9 55 3.1 -55 To 150
Unit
V V A A A W ℃
Thermal...
