Datasheet Summary
P-Channel Enhancement Mode Power MOSFET
Description
The HM5P55R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =-55V,ID =-5A RDS(ON) <80mΩ @ VGS=-10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
Application
- Power switching application
- Hard switched and high frequency circuits
- DC-DC Converter
Schematic diagram
Marking and pin assignment
Package Marking and Ordering Information
Device Marking
Device
Device Package
SOT-223
Reel...