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HY1506I - N-Channel MOSFET

Download the HY1506I datasheet PDF. This datasheet also covers the HY1506U variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

S D S G S D G TO-220 I-PAK(TO-251) D TO-262 Applications

Power Management for Inverter Systems.

Key Features

  • 60V/55A, RDS(ON)=10.5 mΩ (typ. ) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY1506U-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY1506I
Manufacturer HOOYI
File Size 1.25 MB
Description N-Channel MOSFET
Datasheet download datasheet HY1506I Datasheet

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Other Datasheets by HOOYI

Part Number Description
HY1506D N-Channel MOSFET
HY1506P N-Channel MOSFET
HY1506S N-Channel MOSFET
HY1506U N-Channel MOSFET
HY1503C1 N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY1506P/U/I N-Channel Enhancement Mode MOSFET Features • • • • 60V/55A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D Pin Description S D S G S D G TO-220 I-PAK(TO-251) D TO-262 Applications • Power Management for Inverter Systems. G S N-Channel MOSFET Ordering and Marking Information Package Code P HY1506 ÿ YYWWJ G U I HY1506 HY1506 ÿ YYWWJ G ÿ YYWWJ G P : TO220-3L D : I-PAK Date Code YYWW Assembly Material G : Lead Free Device I : TO262-3L Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.