Datasheet Summary
HY1506P/U/I
N-Channel Enhancement Mode MOSFET
Features
- -
- -
60V/55A,
RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS pliant)
Pin Description
TO-220
I-PAK(TO-251)
TO-262
Applications
- Power Management for Inverter Systems.
N-Channel MOSFET
Ordering and Marking Information
Package Code
P HY1506
ÿ YYWWJ G
U I HY1506 HY1506
ÿ YYWWJ G ÿ YYWWJ G
P : TO220-3L D : I-PAK Date Code YYWW Assembly Material G : Lead Free Device
I : TO262-3L
Note:
HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant...
