Datasheet4U Logo Datasheet4U.com

HY1506S - N-Channel MOSFET

Download the HY1506S datasheet PDF. This datasheet also covers the HY1506D variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY1506D-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY1506S
Manufacturer HOOYI
File Size 877.45 KB
Description N-Channel MOSFET
Datasheet download datasheet HY1506S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HY1506C2 N-Channel Enhancement Mode MOSFET HUAYI
HY15-P Current Transducers HY 5 to 25-P LEM
HY1515D N-Channel Enhancement Mode MOSFET HUAYI
HY15P03C2 P-Channel Enhancement Mode MOSFET HUAYI
HY15P03S P-Channel Enhancement Mode MOSFET HUAYI

Other Datasheets by HOOYI

Part Number Description
HY1506D N-Channel MOSFET
HY1506I N-Channel MOSFET
HY1506P N-Channel MOSFET
HY1506U N-Channel MOSFET
HY1503C1 N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY1506D/U/S Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C L=0.5mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=48V Rating 60 ±25 175 -55 to 175 55 220** 55 38 100 50 1.