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HY1506U - N-Channel MOSFET

General Description

S D S G S D G TO-220 I-PAK(TO-251) D TO-262 Applications

Power Management for Inverter Systems.

Key Features

  • 60V/55A, RDS(ON)=10.5 mΩ (typ. ) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D Pin.

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Datasheet Details

Part number HY1506U
Manufacturer HOOYI
File Size 1.25 MB
Description N-Channel MOSFET
Datasheet download datasheet HY1506U Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY1506P/U/I N-Channel Enhancement Mode MOSFET Features • • • • 60V/55A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D Pin Description S D S G S D G TO-220 I-PAK(TO-251) D TO-262 Applications • Power Management for Inverter Systems. G S N-Channel MOSFET Ordering and Marking Information Package Code P HY1506 ÿ YYWWJ G U I HY1506 HY1506 ÿ YYWWJ G ÿ YYWWJ G P : TO220-3L D : I-PAK Date Code YYWW Assembly Material G : Lead Free Device I : TO262-3L Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.