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HY1608B - N-Channel MOSFET

Download the HY1608B datasheet PDF. This datasheet also covers the HY1608P variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (HY1608P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY1608B
Manufacturer HOOYI
File Size 478.07 KB
Description N-Channel MOSFET
Datasheet download datasheet HY1608B Datasheet

Full PDF Text Transcription for HY1608B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY1608B. For precise diagrams, and layout, please refer to the original PDF.

HY1608P/B Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum J...

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Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 80 ±25 175 -55 to 175 65 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=100°C TC=25°C TC=100°C 260** 65 46 126 63 1.19 62.5 EAS Avalanche Energy, Single Pulsed L=0.

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