| Part number | HY1608P |
|---|---|
| Datasheet | HY1608P-HOOYI.pdf |
| File Size | 478.07 KB |
| Manufacturer | HOOYI |
| Description | N-Channel MOSFET |
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pulse width limiited by junction temperature Drain current is limited by junction temperature VD=64V (T C = 25°C Unless Otherwise Noted) Unit V °C °C A A A W °C/W mJ Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltag.
| Part Number | Description |
|---|---|
| HY1608B | N-Channel MOSFET |
| HY1603 | N-Channel MOSFET |
| HY1603D | N-Channel MOSFET |
| HY1603S | N-Channel MOSFET |
| HY1603U | N-Channel MOSFET |
| HY1606AP | N-Channel Enhancement Mode MOSFET |
| HY1606B | N-Channel MOSFET |
| HY1606P | N-Channel Enhancement Mode MOSFET |
| HY1607 | N-Channel MOSFET |
| HY1607A | N-Channel MOSFET |
