HY5N60 - 600V N-Channel MOSFET

HOOYI

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Excellent Gate Charge: 14nC(Typ) Extended Safe Operating Area Lower RDS(ON) : 2 Ω(Typ. ) @VGS =10V 100% Avalanche Tested HY5N60 BVDSS = 640 RDS(on) = 2 Ω ID = 5 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Dr.

HY5N60 600v n-channel mosfet by HOOYI - Datasheet Preview

Datasheet Details

Part number	HY5N60
Manufacturer	HOOYI
File Size	3.18 MB
Description	600V N-Channel MOSFET
Datasheet	HY5N60 Datasheet

Full PDF Text Transcription for HY5N60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY5N60. For precise diagrams, and layout, please refer to the original PDF.

600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellen...

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ust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Excellent Gate Charge: 14nC(Typ) Extended Safe Operating Area Lower RDS(ON) : 2 Ω(Typ.) @VGS =10V 100% Avalanche Tested HY5N60 BVDSS = 640 RDS(on) = 2 Ω ID = 5 A TO-220 1 23 1.Gate 2. Drain 3.

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