Complementary to 2SA1213
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
VCBO
50
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
5
Collector Current -Continuous
IC 2
Collector Power dissipation
0.5 PC
1 (1)
Junction Temperature
TJ 150
Storage Temperature
Tstg -55to +150
N.
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Plastic-Encapsulate Transistors
FEATURES
• Small flat package. • Low saturation voltage VCE(sat)=-0.5V • High speed switching time • PC=1.0 to 2.0W • Complementary to 2SA1213
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
VCBO
50
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
5
Collector Current -Continuous
IC 2
Collector Power dissipation
0.5 PC
1 (1)
Junction Temperature
TJ 150
Storage Temperature
Tstg -55to +150
Note (1):Mounted on a ceramic substrate(250mm2*0.8t)
Unit
V V V A
W
2SC2873 (NPN)
1. BASE 2. COLLECTO 3.