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REPLACEMENT TYPE : 2SD1005
FEATURES Small Flat Package High Breakdown Voltage Excellent DC Current Gain Linearity
HED1005(NPN)
GENERAL PURPOSE TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
VCBO
100
Collector-Emitter Voltage
VCEO
80
Emitter-Base Voltage
VEBO
5
Collector Current-Continuous
IC
1
Collector Power Dissipation
PC 500
Thermal Resistance From Junction to Ambient RθJA
250
Junction Temperature
TJ 150
Storage Temperature
Tstg -55~+150
Unit V V V A
mW °C/W
°C °C
SOT-89 1:BASE 2:COLLECTOR 3:EMITTER
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Co
2SD1005 Datasheet
